TQP7M9106 2w high linearity amplifie r advanced data sheet: rev c 8/9 /12 - 1 of 8 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the glob al network ? applications 24 - pin q f n 4x4mm smt package ? repeaters ? bts transceivers ? bts high power amplifiers ? cdma / wcdma / lte ? general purpose wireless product features functional block diagram ? 5 0 - 15 00 mhz ? + 3 3 dbm p1db at 940 mhz ? + 50 dbm output ip3 at 940 mhz ? 20 .8 db gain at 940 mhz ? +5v single supply, 4 55 ma current ? patented i nternal rf overdrive protection ? patented i nternal dc overvoltage protection ? on chip esd protection ? shut - down capability ? capable of handling 10:1 vswr at 5vcc, 0.9ghz, 33 dbm cw po ut or 23.5 dbm wcdma pout 18 iref 17 gnd/nc rfout/vcc 16 15 rfout/vcc 14 rfout/vcc 13 gnd/nc 12 11 10 9 8 7 6 gnd/nc rfin rfin gnd/nc gnd/nc vbias 5 4 3 2 1 24 23 22 21 20 19 gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc general description pin configuration the tqp7m 9106 is a high linearity , high gain 2 w driver amplifier in industry standard, rohs compliant, qfn surface mount package. this ingap/gaas hbt delivers high performance across 0. 0 5 to 1.5 ghz range of frequencies while achieving 20.8 db gain, + 50 dbm oip3 and + 3 3 dbm p1db at 940mhz while only consuming 4 5 5 ma quiescent current. all devices are 100% rf and dc tested. the TQP7M9106 incorporates patented on - chip circuit techniques that differentiate it from other products in the market. the amplifier integrates an on - chip dc over - voltage and rf over - drive protection. this protects the amplifier from electrical dc voltage surges and high input rf input power levels that may occur in a system. the TQP7M9106 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. the device is an excellent candidate for transceiver line cards and high power amplifiers in current and next generation multi - carrier 3g / 4g base stations. ordering i nfo rmation part no. description tqp7m910 6 1 w high linearity amplifier tqp7m910 6 - pcb900 920- 960 mhz evb standard t/r size = 25 00 pieces on a 13 reel. pin # symbol 1 vbias 4 , 5 rfin 14, 15, 16 rfout/vcc 18 iref 2, 3, 6 - 13, 17, 19 - 24 gnd/nc www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP7M9106 2w high linearity amplifie r advanced data sheet: rev c 8/9 /12 - 2 of 8 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the glob al network ? specifications absolute maximum ratings parameter rating storage temperature - 6 5 to +150 c device voltage, v cc + 8 v maximum inpu t power ( cw , z l =50, t=25c ) +30 dbm operation of this device outside the parameter ranges given above may cause permanent damage. recommended operating conditions parameter min typ max unit s v cc +5 + 5.25 v t case - 40 + 85 c tj (for >10 6 hours mttf ) + 1 7 0 c el ectrical specifications are measured at specified test conditions . specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: v cc= +5 v, t= +25 c, 50 system , tuned app lication circuit parameter conditions min typ max unit s operational frequency range 50 1500 mhz test frequency 9 40 mhz gain 20 .8 db input return loss 9.2 d b out put r eturn loss 1 2.7 db output p1db + 3 3.1 d bm output ip3 pout=+1 7 dbm/t one, f=1 mhz + 50.3 db m wcdma channel power aclr= ?50 dbc (1) + 2 3 .5 dbm noise figure 4.8 db supply voltage, v cc + 5 v quiescent current, i cq 455 ma reference current, i ref 8.9 ma thermal resistance (j unction to b ase) 17.2 c/w notes : 1. a clr test set - up: 3gpp wcdma, tm1+64 dpch, +5 mhz offset, par = 9.7 db at 0.01% prob. www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP7M9106 2w high linearity amplifie r advanced data sheet: rev c 8/9 /12 - 3 of 8 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the glob al network ? device characterization data 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 gain (db) frequency (ghz) gain & max stable gain gain gmax - 1 - 0.8 - 0.6 - 0.4 - 0.2 0 0.2 0.4 0.6 0.8 1 - 1 - 0.75 - 0.5 - 0.25 0 0.25 0.5 0.75 1 input reflection coefficients - 1 - 0.8 - 0.6 - 0.4 - 0.2 0 0.2 0.4 0.6 0.8 1 - 1 - 0.75 - 0.5 - 0.25 0 0.25 0.5 0.75 1 output reflection coefficients note: the gain for the unmatched device in 50 ohm syst em is shown as the trace in black color, [gain (s (21)]. for a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. the maximum stable gain is shown as the bl ue trace [g max ]. the impedance plots are shown from 0.0 5 C 4 ghz . s - parameter data v cc = +5 v, i cq = 4 5 0 ma, t = +25 c, unmatched 50 ohm system, calibrated to device leads freq (ghz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 0.05 - 0.44 - 114.25 19.78 144.69 - 42.10 39.11 - 1.98 - 159.88 0.1 - 0.52 - 146.09 16.00 138.73 - 43.22 20.45 - 1.71 - 170.16 0.2 - 0.50 - 164.26 13.87 132.03 - 40.75 6.76 - 1.50 - 175.13 0.4 - 0.54 - 176.18 11.35 121.63 - 40.83 3.60 - 1.55 - 177.80 0.6 - 0.53 178.67 9.50 112.30 - 41.24 0.84 - 1.56 - 176.22 0.8 - 0.56 175.24 8.04 104.69 - 40.31 1.88 - 1.53 - 175.02 1.0 - 0.62 171.69 6.85 98.63 - 39.99 3.20 - 1.53 - 173.42 1.2 - 0.72 167.05 6.03 91.72 - 39.96 4.12 - 1.56 - 172.13 1.4 - 0.89 162.02 5.70 85.91 - 39.07 0.13 - 1.69 - 171.07 1.6 - 1.08 156.59 5.69 79.97 - 37.92 - 5.54 - 1.79 - 169.68 1.8 - 1.27 150.93 5.48 72.26 - 37.57 - 7.78 - 1.95 - 168.21 2.0 - 1.38 145.46 5.28 63.03 - 36.04 - 20.25 - 2.21 - 167.59 2.2 - 1.48 139.99 4.89 53.16 - 36.36 - 23.44 - 2.57 - 169.42 2.4 - 1.62 134.72 4.85 45.77 - 35.84 - 33.51 - 2.83 - 173.07 2.6 - 1.90 129.34 5.02 36.67 - 34.86 - 43.30 - 3.01 - 178.95 2.8 - 2.39 124.31 4.93 26.06 - 34.10 - 48.61 - 2.94 174.59 3.0 - 3.38 121.03 5.32 14.17 - 33.25 - 62.68 - 2.76 167.99 3.2 - 5.41 121.85 6.17 - 3.37 - 32.23 - 83.93 - 2.38 163.09 3.4 - 8.79 141.69 6.71 - 26.85 - 31.82 - 110.34 - 1.88 159.52 3.6 - 7.36 - 178.09 5.31 - 52.42 - 32.46 - 138.25 - 1.53 155.58 3.8 - 3.69 - 170.72 0.70 - 76.13 - 36.73 - 172.04 - 1.47 151.81 4.0 - 2.78 - 168.72 - 0.74 - 86.65 - 37.56 176.73 - 1.65 152.04 www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP7M9106 2w high linearity amplifie r advanced data sheet: rev c 8/9 /12 - 4 of 8 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the glob al network ? notes: 1. components shown on the silkscreen but not on the schematic are not used. 2. 0 resistor can be replaced with copper trace in the target application layout. 3. to power down the device, voltage can be applied to v ref to control i ref by placing resistor r8 and removing r7. 4. the recommended component values are dependent upon the frequen cy of operation. 5. all components are of 0603 size unless stated on the schematic. 6. r1 is critical for device linearity performance. 7. critical component placement locations: distance between center of c8 and tqp7m910 6 (u1) device package is 243 mil (11.7o at 940mhz) distance between center of l5 and tqp7m910 6 (u1) device package is 452 mil (21.8o at 940mhz) distance between center of c9 and tqp7m910 6 (u1) device package is 275 mil (13.3o at 940mhz) distance between center of c2 and tqp7m910 6 (u1) device packag e is 355 mil (17.2o at 940mhz) c11 c10 r2 c9 c1 c7 c15 c3 c8 c2 r6 r3 r1 l4 l1 u1 b1 c17 r8 c13 c14 l3 l5 1 2 3 4 5 6 gnd/nc 18 17 16 15 14 13 24 23 22 21 20 19 7 8 9 10 11 12 rfout rfout rfout gnd/nc iref gnd/nc vbias gnd/nc gnd/nc rfin rfin gnd/nc u1 c10 22 pf r2 51 : j2 rf input c9 2.4 pf c8 6.8 pf j3 rf output c2 8.2 pf c3 100 pf c7 10 uf 6032 c15 100 pf l1 18 nh 0805 b1 0 : c1 100 pf c17 1000 pf l3 0 : r1 68 nh 0603 c13 0.1 uf r7 240 : c14 100 pf l4 0 : r3 0 : r6 280 : c11 0 : l5 8.2 nh gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc vcc +5v d3 sm05t1g bill of material ref des value description manuf. part number u1 n/a 2w high linearity amplifier triquint tqp7m910 6 n/a n/a printed circuit board triquint d 3 n/a zener, dual, sot - 23 various b1, l3, l4, r3 , c11 0 resistor, chip, 0603, 5%, 1/16w various r2 51 resistor, chip, 0603, 5%, 1/16w various r6 280 resistor, chip, 0603, 1%, 1/16w various r 7 240 resistor, chip, 0603, 1%, 1/16w various c2 8.2 pf capacitor, chip, 0603, 0.05pf, 50 v, accu - p avx 06035j8r2abstr c7 10 uf capacitor , tantalum, 6032, 35v, 10% various c8 6.8pf capacitor, chip, 0603, 0.05pf, 50 v, accu - p avx 06035j6r8abstr c9 2.4 pf capacitor, chip, 0603, 0.05pf, 50 v, accu - p avx 06035j2r4abstr c10 22 pf capacitor, chip, 0603, 5%, 50 v, npo/cog various c1, c3, c14, c15 100 pf capacitor, chip, 0603, 5%, 50v, npo/cog various c13 0.1 uf capacitor, chip, 0603, 50v, x5r, 10% various c17 1000 pf capacitor, chip, 0603, 10%, 50v, npo/cog various l1 18 nh inductor, 0805, 5%, coilcraft cs series coilcraft 0805cs - 18 0xjlb l5 8.2 nh inductor, 0603, 5% toko ll1608 - fsl8n2 r1 68 nh induc tor, 0603, 5% toko ll1608 - fsl68n r4, c12, c4 n/a do not place application circuit 920 - 960 mhz (tqp7m910 6 - pcb900) www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP7M9106 2w high linearity amplifie r advanced data sheet: rev c 8/9 /12 - 5 of 8 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the glob al network ? typical performance 920 - 960 mhz (tqp7m 9106- pcb900) notes: 1. aclr test set - up: 3gpp wcdma, tm1+64 dpch, pa r = 9.7 db at 0.01% prob. rf performance plots 920 - 960 mhz (tqp7m 9106- pcb900) 17 18 19 20 21 22 0.92 0.93 0.94 0.95 0.96 gain (db) frequency (ghz) gain vs. frequency - 40 c +25 c +85 c - 20 - 15 - 10 - 5 0 0.92 0.93 0.94 0.95 0.96 return loss (db) frequency (ghz) input return loss vs. frequency - 40 c +25 c +85 c - 20 - 15 - 10 - 5 0 0.92 0.93 0.94 0.95 0.96 return loss (db) frequency (ghz) output return loss vs. frequency - 40 c +25 c +85 c - 65 - 60 - 55 - 50 - 45 17 19 21 23 25 aclr (dbm) output power (dbm) aclr vs. output power at 940mhz w - cdma 3gpp test model 1+64 dpch par = 9.7db @ 0.01% probability 3.84 mhz bw frequency : 940 mhz - 40 c +25 c +85 c - 65 - 60 - 55 - 50 - 45 17 19 21 23 25 aclr (dbm) output power (dbm) aclr vs. output power vs. frequency w - cdma 3gpp test model 1+64 dpch par = 9.7db @ 0.01% probability 3.84 mhz bw temp.=+25 o c 920 mhz 940 mhz 960 mhz 35 40 45 50 55 11 13 15 17 19 21 23 oip3 (dbm) output power / tone(dbm) oip3 vs. output power at 940mhz 1mhz tone spacing - 40 c +25 c +85 c 35 40 45 50 55 11 13 15 17 19 21 23 oip3 (dbm) output power / tone(dbm) oip3 vs. output power vs. frequency 1mhz tone spacing temp.=+25 o c 920 mhz 940 mhz 960 mhz 30 31 32 33 34 35 920 930 940 950 960 p1db (dbm) frequency (mhz) p1db vs. frequency +85 c +25 c ?40 c 400 500 600 700 800 900 1000 15 19 23 27 31 35 icc (ma) output power (dbm) icc vs. output power temp.=+25 o c frequency : 940 m hz frequency 920 940 960 mhz gain 20.6 20.8 21 db input return loss 8.5 9.2 9.4 db output return loss 11.3 12.7 14.9 db output p1db +32.9 +33.1 +33.2 dbm output ip3 (+17 dbm /tone, ?f = 1 mhz) +49.8 +50.3 +50.5 dbm wcdma channel power (at - 50 dbc aclr) [1] +23. 3 +23.5 +23.5 dbm noise figure 4.8 4.8 4.8 db supply voltage, v cc +5 v quiescent collector current, i cq 455 ma www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP7M9106 2w high linearity amplifie r advanced data sheet: rev c 8/9 /12 - 6 of 8 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the glob al network ? pin configuration and description 18 iref 17 gnd/nc rfout/vcc 16 15 rfout/vcc 14 rfout/vcc 13 gnd/nc 12 11 10 9 8 7 6 gnd/nc rfin rfin gnd/nc gnd/nc vbias 5 4 3 2 1 24 23 22 21 20 19 gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc gnd/nc pin symbol description 1 vbias voltage supply for active bias for the amp. connect to same supply voltage as vcc. 4, 5 rf in rf input . requires external match for optimal performance. external dc block required. 14, 15, 16 rfout / v cc rf output. requires external match for optimal performance. external dc block and supply voltage is required. 18 i ref reference curre nt into internal active bias current mirror. current into i ref sets device quiescent current. also, can be used as on/off control. 2, 3, 6 - 13, 17, 19 - 24 gnd rf/dc ground connection applications information pc board layout triquint pcb 10 78282 mater ial and stack - up 50 ohm line dimensions: width = .031 spacing = .035. 1 oz. cu bottom layer nelco n-4000-13 core nelco n-4000-13 r =3.7 typ. 1 oz. cu top layer 1 oz. cu inner layer 1 oz. cu inner layer 0.014" 0.014" 0.062" 0.006" finished board thickness www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP7M9106 2w high linearity amplifie r advanced data sheet: rev c 8/9 /12 - 7 of 8 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the glob al network ? mechanical information package marking and dimensions package marking part number C 7m9106 date code C yymm lot code C aaxxxx pcb m ounting pattern notes: 1. all dimensions are in millimeters. angles are in degrees. 2. use 1 oz. copper minimum for top and bottom layer metal. 3. vias are required under the backside paddle of this device for proper rf/dc grounding and thermal dissipation. we recommend a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25mm (0.10). 4. ensure good package backside paddle solder attach for reliable operation and best electrical performance. 5. place mount ing screws near the part to fasten a back side heat sink. 6. do not apply solder mask to the back side of the pc board in the heat sink contact region. 7. ensure that the backside via region makes good physical contact with the heat sink. 6 0.64 0.64 r.19 3 2.70 24x 0.70 0.50 pitch 2.70 2.70 0.19 24x 0.38 back side (solder mask) minimum backside thermal contact area 1 1 component side 16x package outline gnd/thermal pad .10 c .08 c seating plane 24x 4.000 4.000 2.700.05 exp. dap 24x 0.400.05 2.700.05 exp. dap .8500.050 c 24x 0.250.05 24x 0.50 pitch pin #1 identifier chamfer 0.300 x 45 terminal #1 identifier 5 6 6 4 5 r.075 2.50 ref. .203 ref. 0.000 0.050 notes: 1. all dimensions are in millimeters. angles are in degrees. 2. except where noted, this part outline conforms to jedec standard mo - 220, issue e (variation vggc) for thermally e nhanced plastic very thin fine pitch quad flat no lead package (qfn). 3. dimension and tolerance formats conform to asme y14.4m - 1994. 4. the terminal #1 identifier and terminal numbering conform to jesd 95 - 1 spp - 012. 5. co- planarity applies to the exposed ground/th ermal pad as well as the contact pins. 6. package body length/width does not include plastic flash protrusion across mold parting line. triquint 7m9106 yymm a axxxx www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP7M9106 2w high linearity amplifie r advanced data sheet: rev c 8/9 /12 - 8 of 8 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the glob al network ? esd information esd rating: class 1c value: 1 000 v and < 2 000 v test: human body model (hbm) standard: jedec standard jesd22 - a114 esd rating: class iv value: 1 00 0 v min test: charged device model (cdm) standard: jedec standard jesd22 - c101 solderability compatible with both lead - free (260 c max. reflow temperature) and tin/lead (245 c max. reflow temperature) soldering processes. package contact plating : annealed matte tin over copper. rohs compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes : x lead free x halogen free (chlorine, bromine) x antimony free x tbbp - a (c 15 h 12 br 4 0 2 ) free x pfos free x svhc free moisture sensitivity level msl rating : level 1 test: 260c convection reflow standard: jedec standard ipc/jedec j - std - 020 for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1.503.615.9000 email: info - sales@tqs.com fax: +1.503.615.8902 for technical questi ons and application information email: sjcapplications.engineering@tqs.com the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contain ed herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assume s no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user . all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or aut horized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. important notice contact information product compliance information www.datasheet.net/ datasheet pdf - http://www..co.kr/
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